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ASM International benefits as each new leading-edge node adds more atomic layer deposition steps per wafer, its core strength. Gate-all-around transistors need ultra-thin, even films on every surface of stacked nanosheets, and the next phase depends more on transistor architecture and materials than on EUV, raising deposition's value. With TSMC's 2nm in volume, Intel's 18A its first GAA node and 1.4nm pilots due in late 2026, growth comes from process intensity as much as wafer volume. x.com
